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Researchers at Fraunhofer Institute for Solar Energy Systems ISE have achieved a conversion efficiency of 68.9% for a III-V semiconductor photovoltaic cell based on gallium arsenide (GaAs) exposed to laser light of 858 nm. The mark is reportedly the highest efficiency yet achieved for the conversion of light into electricity.
The team used a thin-film technology in which the solar cell layers are first grown on a GaAs substrate, which is then removed. A conductive, highly reflective mirror is applied to the back surface of the remaining semiconductor structure, which is only a few micrometers thick.
In photovoltaic cells, light is absorbed in a cell structure, made of GaAs semiconductor material, for example. The absorbed light…READ MORE