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A new development in semiconductor technology, leading to an ultrafast, highly sensitive avalanche photodiode (APD) with extremely low excessive noise, could improve data transmission rates and/or enable longer transmission distances. Cardiff University researchers, led by professor Diana Huffaker, partnered with researchers at the University of Sheffield and the University of California, Los Angeles (UCLA) to develop the technology.
To limit noise and increase sensitivity, the researchers used molecular beam epitaxy (MBE) to grow the compound semiconductor crystal in an atom-by-atom regime. The researchers used a new MBE methodology to combine four different atoms to make the material. The resulting material was tested in a…READ MORE