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An international research team based at the Institute for Quantum Electronics at ETH Zurich generated electrical light from a silicon-germanium (SiGe) semiconductor structure. That material is compatible with standard silicon device fabrication processes — giving the development meaning as a potential alternate approach to building a laser on silicon.
Specifically, the advancement counters the physical processes that generate light in gallium arsenide (GaAs), on which diode lasers (used commonly in barcode scanners and laser pointers) are often based. Those physical processes are not highly amenable to silicon.
The electroluminescence that the team of Giacomo Scalari and Jérôme Faist achieved is in the…READ MORE