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    Chalcogenide Perovskites Show Promise for Optoelectronics Applications

    Article obtained from Photonics RSS Feed.

    A new barium zirconium sulfide (BaZrS3) thin film, developed by a team at the University at Buffalo, combines strong light absorption with good charge transport — two qualities that could be useful for optoelectronics applications such as photovoltaics, photodetectors, and LEDs.

    The researchers made the BaZrS3 films by using a laser to heat up and vaporize barium zirconium oxide. The vapor was deposited on a sapphire surface, forming a film, and then converted into the final material through a chemical reaction called sulfurization.

    A barium zirconium sulfide thin film created by the research team. Courtesy of Douglas Levere/University at Buffalo.
    BaZrS3 belongs to a category of materials known as chalcogenide…

    Dec, 30 2019 |

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