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Researchers from the Nagoya Institute of Technology (NITech) used UV light to test the performance of miniaturized semiconductors for next-generation electronics. Specifically, the team determined the interface properties of a graphene-gallium nitride (GaN) heterojunction device by characterizing the device under UV illumination. According to the team, an understanding of GaN heterojunction device interfaces and how to improve them is necessary for better device performance.
The researchers demonstrated the effect of UV illumination on electrical hysteresis — a phenomenon in which electrons become trapped at the interface, leading to a behavioral shift in the device — in a graphene-GaN vertical heterojunction device. When…READ MORE